technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com n-channel enhancement mode power mosfet t4-lds-0203 rev. 1 (110640) page 1 of 3 devices msafx50n20a 200 volts 50 amps 45 m ? features ? ultrafast body diode ? rugged polysilicon gate cell structure ? increased unclamped inductive switching (uis) capability ? hermetically sealed, surface mount power package ? low package inductance ? very low thermal resistance ? reverse polarity available upon request table 1 ? absolute maximum ratings ( tc = +25c unless otherwise noted) parameters / test conditions symbol max. unit drain-to-source breakdown voltage (gate shorted to source) @ t j 25c bv dss 200 v drain-to-gate breakdown voltage @ t j 25c, r gs = 1m ? bv dgr 200 v continuous gate-to-source voltage v gs +/-20 v transient gate-to-source voltage v gsm +/-30 v continuous drain current t j = 25c t j = 100c i d25 i d100 50 40 a peak drain current, pulse width limited by t jmax i dm 200 a repetitive avalanche current i ar 50 a repetitive avalanche energy e ar 30 mj single pulse avalanche energy e as tbd mj voltage rate of change of the recovery diode @ i s i dm , di/dt 100a / s, v dd v dss , t j 150 c dv/dt 5.0 v/ns power dissipation p d 300 w junction temperature range t j -55 to +150 c storage temperature range t stg -55 to +150 c continuous source current (body diode) i s 50 a pulse source current (body diode) i sm 200 a thermal resistance, junction to case jc 0.25 c/w
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0203 rev. 1 (110640) page 2 of 3 table 2 ? electrical characteristics ( tc = +25c unless otherwise noted) parameters / test conditions symbol min. typ max. unit drain-to-source breakdown voltage (gate shorted to source) v gs = 0v, i d = 250 a bv dss 200 v temperature coefficient of the drain-to-source - breakdown voltage bv dss / t j tbd gate threshold voltage v ds = v gs , i d = 4 ma v gs(th) 2.0 4.0 gate-to-source leakage current v gs = 20vdc, v ds = 0 t j = 25c t j = 125c i gss 100 200 na drain-to-source leakage current (zero gate voltage drain current) v ds = 0.8 bv dss, t j = 25 c v gs = 0v, t j = 125 c i dss 200 1000 a static drain-to-source on-state resistance (1) v gs = 10v, i d = 25a, t j = 25c v gs = 10v, i d = 50a t j = 25c v gs = 10v, i d = 25a t j = 125 c r ds(on) 0.09 0.045 0.055 ? forward transconductance (1) v ds 10v, i d = 50a g fs 26 32 s input capacitance v gs = 0v, v ds = 25v, f = 1mhz c iss 4400 pf output capacitance vgs = 0v, v ds = 25v, f = 1mhz c oss 500 pf reverse transfer capacitance v gs = 0v, v ds = 25v, f = 1mhz c rss 285 pf turn-on delay time t d(on) 20 25 ns rise time v gs = 10v, v ds = 100v, t r 45 50 ns turn-off delay time i d = 25a, r g = 2.00 t d(off) 75 90 ns fall time t f 20 25 ns total gate charge v gs = 10v, v ds = 100v, q g(on) 190 220 nc gate-to-source charge i d = 25a q gs 35 50 nc gate-to-drain (miller) charge q gd 95 110 nc body diode forward voltage (1) i f = i s , v gs = 0v v sd 1.5 v reverse recovery time (body diode) i f = 10a, t j = 25c -di/dt = 100 a / s, t j = 125c t rr 200 300 ns reverse recovery charge i f = 10a, t j = 25c di/dt = 100a / s, t j = 125c q rr 1.5 2.6 c
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0203 rev. 1 (110640) page 3 of 3 package dimensions
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